Education

  • 1990: Ph.D., Physics, University of Houston, U.S.A.
  • 1980: Masters of Science in Process Control and Monitoring, University of Houston, U.S.A.
  • 1977: Diplôme Etude Supérieure in Physics, University of Oran, Algeria

Publications and Presentations

  • Over 300 papers in peer reviewed publications.
  • More than 600 presentations (invited and contributed) in U.S. and International conferences.
  • More than 25 U.S. patents in applied technology area.
  • Book Chapter in 2012 reviewing an area of research which was the subject of the 2014 Nobel Physics prize.
  • 2 research inventions were selected to be featured in NASA Technology Briefs.

Undergraduate and Graduate Research Training

  • More than 50 undergraduate students (ECE, ME, Physics, Chemistry).
  • 25 MS Thesis supervised and funded (ECE, ME, Physics and Chemistry).
  • 16 Ph.D. Dissertation supervised and funded (ECE, Chemistry and Physics).
  • 17 Postdoctoral Fellows supervised and funded.

Selected Awarded Patents

  • US 8328785 (2012).Inventors : Abdelhak Bensaoula, John Christopher Boney, A. Sam Beddar, Tina Marie Briere, Sunil Krishnan, Andrew K. Lee
  • Single-Chip Monolithic Dual-Band Visible- or Solar-Blind Photodetector, US 7,566,875 (2009). Inventors : David Starikov, Abdelhak Bensaoula
  • Single-chip Monolithic Dual-Band Visible- or Solar-Blind Photodetector, US 7,381,966 (2008). Inventors : David Starikov, Abdelhak Bensaoula
  • One-Chip Micro-Integrated Optoelectronic Sensor, US 6,881,979 (2005) and US 6,608,360 (2003). Inventors : David Starikov, Igor Berishev, Abdelhak Bensaoula
  • Capacitor and Method of Storing Energy, US 6,939,775 (2005).Inventors: Abdelhak Bensaoula, Nacer Badi
  • Group III nitride field emitters, US 6218771 (2001). Inventors : Igor Berishev, Abdelhak Bensaoula
  • US 5800630 (1998). Inventors : Mauro F. Vilela, Abdelhak Bensaoula, Alexandre Freundlich, Philippe Renaud, Nasr-Eddine Medelci
  • US 5851310 (1998). Inventors : Alexandre Freundlich, Philippe Renaud, Mauro Francisco Vilela, Abdelhak Bensaoula
  • To see other patents, check the full list on the patents page.

Working Languages

  • English (fluent), French (fluent), Arabic (working knowledge)

Selected Recent Projects

  • 2012 – 2014: Development of materials for THz Applications

    In collaboration with Prof. Nelson at MIT, we have demonstrated materials (InGaN based) that are active in the critical 1 to 4 THz wavelength region. These materials are important in the fabrication of emitter and detector devices central to the next generation of defense, medical and oil instrumentation systems (imaging and treatment).

  • 2013 – 2014: Solar Powered High Efficiency Water Management Systems

    In partnership with a European Start up, we developed the product portfolio and business plan for a novel water management technology. This technology has applications in residential, industrial and agricultural settings. The technology allows for lower water consumption (better than 60% savings) while increasing users’ comfort, meeting their expectations and at lower energy cost. Initial product launch will be in Algeria and Morocco (Residential and drip irrigation applications).

  • 2012 – 2014: Pilot plant design and implementation of a microalgae based line for pharmaceutical and food supplement products

    Under funding by an established Algerian biotechnology company we have designed and delivered a pilot microalgae production plant. Target applications are: (1) medical (currently being tested in cancer treatment by a French laboratory) and (2) Food supplement.

  • 2011- 2014: Low cost Solar Powered Products with IHARE

    In collaboration with a Moroccan Think Tank (I.H.A.R.E), we developed a modular low cost approach for the deployment of low cost solar powered light and irrigation equipment for Morocco rural areas (design to be optimized for ease of maintenance and cross compatibility/minimum spare parts inventory).

  • 2009 – 2012: Deep Sea Pipeline Monitoring Platform

    Under funding by a large oil company, we designed, built, tested and deployed a compact, low cost, autonomous, self-powered, miniature multi-sensor platform capable of operating under deep sea conditions and fitted with a wireless underwater communication system.

  • 2008 – 2015: Technology Transfer and Entrepreneurial Training (Algeria)

    Collaboration with the Center for Technology Transfer (with the University of Tlemcen): The CTT has for mission to move University research to the market place with emphasis on young entrepreneurs. Its role is to train and mentor the participants, select the projects, help with market study and business plan development, and fund the projects using an incubator/accelerator model.

Partial List of Publications:

  • Effect of N2* and N on GaN nanocolumns grown on Si(111) by Molecular Bean Epitaxy”, A. Debnah, J. S. Gandhi, M. Kesaria, R. Pillai, D. Starikov and A. Bensaoula; J. Appl. Phys. 119, 104302 (2016)
  • InGaN/Silicon Heterojunction based narrow band near-infrared detector”; Rajeev Pillai, David Starikov, Jateen Gandhi, Ananya Debnath, Ruiteng Li, Christopher Boney and Abdelhak Bensaoula”; J. Vac. Sci. Technol. B 33, 011205 (2015)
  • A photoluminsecence study of plasma reactive ion etching-induced damage in GaN”; Z. Mouffak, A. Bensaoula and L. Trombetta; Journal of Semiconductors 35(11) · October 2014
  • Epitaxial growth of (111)-oriented ZrxTi1-xN thin films on c-plane Al2O3 substrates”; Ruiteng Li, Jateen S. Gandhi; Rajeev Pillai, Rebecca Forrest, David Starikov and Abdelhak Bensaoula”; Journal of Crystal Growth, Volume 404, 15 October 2014, Pages 1-8 
  • High-pressure Raman scattering in InGaN heteroepitaxial layers: Effect of the substrate on the phonon pressure coefficients” R. Oliva, J.Ibanez, R. Cusco, A. Dadgar, A. Krost, J. Gandhi, A. Bensaoula and L. Artus”; Appl. Phys. Lett. 104, 142101 (2014)
  • Multiphonon resonant Raman scattering in He+ -implanted InGaN”, N. Domenech-Amador, R. Cusco, R. Garcia-Hernansanz, G. Gonzalez-Diaz, J. Ganghi, A. Bensaoula and L. Artus; Semicond. Sci. Technolo. 29 (2014) 045013 (5pp).
  • Phonon modes and Raman intensity profiles in Zinc-blende BN/GaN superlattices”; Devki N.Talwar, Benjamin A. Lenze, Jason E. Czak and Abdelhak Bensaoula; Journal of Physics D: Applied Physics, Vol. 47, 1 id: 015305 (2014).
  • P2IMS depth profile analysis of high temperature boron oxynitride sielectric films”; N. Badi, S. Vijayaraghavan, A. Benqaoula, A. Tempez, C. Tauziede, P. Chapon; Applied Surface Science; Vol. 292, 1-4, 2014.
  • Dynamic range and sensitivity of field emission pressure sensors with non-silicon membranes”; N. Badi, A. Benqaoula, A.M. Nair; Applied Surface Science, Vol. 285, Part B, 15 November 2013, P. 907-911.
  • Determination of optical constants and stoichiometry of BxOyNz films deposited by ECR-PVD”; N.Badi, M. Morales, C. Boney, A. Bensaoula, A. Zomorrodian, Journal of Non-Crystalline Solids, Vol. 382, 15 December 2013, P. 1-4.
  • Laser Engineered core-shell nanodielectrics with giant electrical permittivity”; n. Badi, A. Benqaoula, A.V. Simakin, G.A. Shafeev, Materials Letters 108 (2013) 225 – 227.
  • Autonomous Sensor System for Deep-Sea Pipeline Monitoring”; Sofiane Amara-Madi, Alan Price and Abdelhak Bensaoula; IEEE Proceedings of NEWCAST (2013); page 1-4, ISBN: 978-1-4799-0618-5.
  • Deep level transient spectroscopy characterization of defects in AlGaN/Si dual-band (UV/IR) detectors grown by MBE”; M. Aziz, R. H. Mari,  J. F. Felix, A. Mesli, D. Taylor, M. O. Lemine, M. Henini, R. Pillai, D. Starikov, C. Boney, A. Bensaoula , Phys. Satus Solidi A, Vol 10 (1), p 101-104 (2013).
  • Temperature Dependence of Surface Acoustic Wave Propagation Velocity in InxGa1-xN Films Obtained by High-Resolution Brillouin Spectroscopy: Determination of Temperature Coefficient of Frequency”; Rafael J. Jiménez Riobóo, Carlos Prieto, Ramón Cuscó, Lluís Artús, Chris Boney, Abdelhak Bensaoula, Tomohiro Yamaguchi,Yasushi Nanishi; Appl.Phys. Express 6 (2013) p. 056601.
  • Improved Nanoreinforced Composite Material Bonds with Potential Sensing Capabilities”; David Starikov, Clyde A. Price, Michael S. Fischer, Abdelhak Bensaoula, Farouk Attia, Thomas A. Glenn, and Mounir Boukadoum., Sensors & Transducers Journal, ISSN 1726-5479, Vol. 13, p117 (2012).
  • Simulation of a solar cell based on InGaN”; L.A. Vilbois, A. Chekrane, A. Bensaoula, C. Boney, T. Benouaz; Energy Procedia, Vol. 18, 2012, P. 795-806.
  • Raman scattering by the E2h and A1(LO) phonons of InxGa1−xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy”, R. Oliva, J. Ibáñez, R. Cuscó, R. Kudrawiec, J. Seranczuk, O. Martínez, J. Jiménez, M. Henini, C. Boney, A. Bensaoula, and L. Artús; J. Appl. Phys. 111,063502 (2012).
  • Raman scattering by folded acoustic phonons in InxGa1-xN/GaN superlattices", J. Ibáñez, A. Rapaport, C. Boney, R. Oliva, R. Cuscó, A. Bensaoula, and L. Artús, J. Raman Spectrosc. 2012, 43, 237-240.
  • Growth and Characterization of InGaN for Photovoltaic Devices”, C. Boney, I. Hernandez, R. Pillai, D. Starikov, A. Bensaoula , M. Henini , M. Syperek , J. Misiewicz, and R. Kudrawiec . Physica Status Solidi C 8, 2460 (2011).
  • C. Boney, et al., "Molecular beam epitaxy growth of InGaN-GaN superlattices for optoelectronic devices," Journal of Vacuum Science & Technology B, vol. 29, May 2011.
  • MBE Growth of InGaN-GaN Superlattices for Optoelectronic Devices”; C. Boney, D. Starikov, I. Hernandez, R. Pillai, and A. Bensaoula,, J. Vac. Sci. B 29(3), 03C106-1, (2011).
  • InGaN Devices for High Temperature Photovoltaic Applications”; Boney, C., Hernandez, I., Pillai, R., Starikov, D. and Bensaoula, A.; IEEE Phot Spec Conf: 002522 – 002527 (2010)
  • Simulation of Field Emission Pressure Micro Sensors with non-Silicon Membranes", N. Badi, A.M. Nair, and A. Bensaoula, Applied Surface Science (2010) 256, 4990 (2010).
  • Low Temperature Deposited Boron Nitride Thin Films for a Robust Anti-Reflection Coating of Solar Cells”, Alemu, A. Freundlich, N. Badi, C. Boney and A. Bensaoula, Solar Energy Materials & Solar Cells 94, 921 (2010).
  • N. Bordel, et al., "Quantitative depth profile analysis of boron implanted silicon by pulsed radiofrequency glow discharge time-of-flight mass spectrometry," Solar Energy Materials and Solar Cells, vol. 94, pp. 1352-1357, Aug 2010.
  • 26. C. Boney, et al., "Growth and Characterization of Ingan for Photovoltaic Devices," 35th Ieee Photovoltaic Specialists Conference, 2010.
  • C. Boney, et al., "Ingan Devices for High Temperature Photovoltaic Applications," 35th Ieee Photovoltaic Specialists Conference, 2010.
  • N. Badi, et al., "Field emission pressure sensors with non-silicon membranes," Applied Surface Science, vol. 256, pp. 4990-4994, Jun 2010.
  • A. Alemua, et al., "Low temperature deposited boron nitride thin films for a robust anti-reflection coating of solar cells," Solar Energy Materials and Solar Cells, vol. 94, pp. 921-923, May 2010.
  • Gallium adlayer adsorption and desorption studies with Real Time Analysis by Spectroscopic Ellipsometry and RHEED on A-, M-, and C-plane GaN grown by PAMBE.”, P. Misra, C. Boney, D. Starikov, and A. Bensaoula, J. Crys .Growth 311 2033–2038 (2009) .
  • R. Pillai, et al., "Employment of III-Nitride/Silicon Heterostructures for Dual-Band UV/IR Photodiodes," Gallium Nitride Materials and Devices Iv, vol. 7216, 2009.
  • C. Boney, et al., "Gallium adlayer adsorption and desorption studies with real-time analysis by spectroscopic ellipsometry and RHEED on A-, M-, and C-plane GaN grown by PAMBE," Journal of Crystal Growth, vol. 311, pp. 2033-2038, Mar 15 2009.
  • N. Badi, et al., "Nano-Engineered Dielectrics for Energy Storage Solutions," Nanotech Conference & Expo 2009, Vol 2, Technical Proceedings, pp. 534-537, 2009.
  • Optical Radiation Selective Photodetectors Based on III-N”; R. Pillai, D. Starikov, C. Boney and A. Bensaoula. J. Vac. Sci. & Technol. A, 26(4), 970, July/Aug (2008).
  • P. Misra, et al., "M-plane III-nitride materials for polarization sensitive devices grown by PAMBE with real time analysis by spectroscopic ellipsometry," Physica Status Solidi C - Current Topics in Solid State Physics, Vol 5, No 6, vol. 5, pp. 2286-2289, 2008.
  • P. Misra, et al., "Fabrication and Characterization of 2.3ev Ingan Photovoltaic Devices," Pvsc: 2008 33rd Ieee Photovoltaic Specialists Conference, Vols 1-4, pp. 1380-1384, 2008.
  • C. Boney, et al., "Molecular beam epitaxy III-nitride growth for polarization sensitive devices based on M-plane films with in situ real time analysis by spectroscopic ellipsometry," Journal of Vacuum Science & Technology B, vol. 26, pp. 1049-1052, May 2008.
  • A. Alemu, et al., "MgF(2)/BN double layer antireflection coating for photovoltaic application," Pvsc: 2008 33rd Ieee Photovoltaic Specialists Conference, Vols 1-4, pp. 228-231, 2008.
  • C. Joseph, et al., "Integrated solid-state optoelectronic sensor system for biochemical detection and quantification," 2007 International Semiconductor Device Research Symposium, Vols 1 and 2, pp. 34-35, 2007.
  • C. Joseph, et al., "High-speed front end for LED-photodiode based fluorescence lifetime measurement system," 2007 Ieee International Symposium on Circuits and Systems, Vols 1-11, pp. 3578-3581, 2007.
  • E. G. Baburaj, et al., "Enhancement of adhesive joint strength by laser surface modification," International Journal of Adhesion and Adhesives, vol. 27, pp. 268-276, Jun 2007.
  • K. Tabari, et al., "Neural network processor for a FPGA-based multiband fluorometer device," 2006 International Workshop on Computer Architecture for Machine Perception and Sensing, pp. 198-202, 2006.
  • G. A. Shafeev, et al., "3D periodic structures grown on silicon by radiation of a pulsed Nd : YAG laser and their field emission properties," Applied Surface Science, vol. 252, pp. 4453-4456, Apr 30 2006.
  • H. Chen, et al., "Room-temperature deposition of diamond-like carbon field emitter on flexible substrates," Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 243, pp. 75-78, Jan 2006.
  • D. Starikov, et al., "Chip-based integrated filterless multi-wavelength optoelectronic bio-chemical sensors.," Proceedings of the ISA/IEEE 2005 Sensors for Industry Conference, pp. 129-132, 2005.
  • H. J. Lozykowski, et al., "Luminescence and excitation mechanism of pr, eu, tb and tm ions implanted into AlN," Microelectronics Journal, vol. 36, pp. 453-455, Mar-Jun 2005.
  • P. V. Kazakevich, et al., "Formation of core-shell nanoparticles by laser ablation of copper and brass in liquids," From Nanopowders to Functional Materials, vol. 106, pp. 23-26, 2005.
  • L. A. Carreno and A. Bensaoula, "Combination of time of flight direct recoiled spectroscopy and ion scattering trajectory simulations of (Ga,Mn)N growth by chemical beam epitaxy," Applied Physics Letters, vol. 86, Jan 10 2005.
  • M. Boukadoum, et al., "FPGA implementation of a CDMA source coding and modulation subsystem for a multiband fluorometer with pattern recognition capabilities," 2005 Ieee International Symposium on Circuits and Systems (Iscas), Vols 1-6, Conference Proceedings, pp. 4767-4770, 2005.
  • D. Starikov, et al., "Spectral and surface analysis of heated micro-column arrays fabricated by laser-assisted surface modification," Infrared Physics & Technology, vol. 45, pp. 159-167, May 2004.
  • D. Starikov, et al., "Dual-band UV/IR optical sensors for fire and flame detection and target recognition," Proceedings of the Isa/Ieee Sensors for Industry Conference, pp. 36-40, 2004.
  • G. A. Shafeev, et al., "Arrays of 3D micro-columns generated by laser ablation of Ta and steel: modelling of a black body emitter," Applied Physics a-Materials Science & Processing, vol. 79, pp. 973-975, Sep 2004.
  • Z. Mouffak, et al., "The effects of nitrogen plasma on reactive-ion etching induced damage in GaN," Journal of Applied Physics, vol. 95, pp. 727-730, Jan 15 2004.
  • N. Badi, et al., "Design and fabrication of field emission -based pressure microsensors," Technical Digest of the 17th International Vacuum Nanoelectronics Conference, pp. 24-25, 2004.
  • Z. Mouffak, et al., "Effect of photo-assisted RIE damage on GaN," Mrs Internet Journal of Nitride Semiconductor Research, vol. 8, 2003.
  • L. A. Carreno, et al., "In situ determination of surface composition, polarity, crystallographic relationship, and periodicity of GaN films by mass spectroscopy of recoiled Ions and direct recoiled spectroscopy," Journal of Applied Physics, vol. 94, pp. 7883-7887, Dec 15 2003.
  • A. Tempez, et al., "Characterization of TiAlN thin film annealed under O-2 by in situ time of flight direct recoil spectroscopy/mass spectroscopy of recoiled ions and ex situ x-ray photoelectron spectroscopy," Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, vol. 20, pp. 1320-1326, Jul-Aug 2002.
  • D. Starikov, et al., "Experimental simulation of integrated optoelectronic sensors based on III nitrides," Journal of Vacuum Science & Technology B, vol. 20, pp. 1815-1820, Sep-Oct 2002.
  • D. Starikov, et al., "Compact fluorescence sensors based on III nitrides," Second Joint Embs-Bmes Conference 2002, Vols 1-3, Conference Proceedings, pp. 1673-1674, 2002.
  • D. Starikov, et al., "Integrated multi-wavelength fluorescence sensors," Proceedings of the Isa/Ieee Sensors for Industry Conference, pp. 15-18, 2002.
  • A. Bensaoula, et al., "GaN thin film growth on GaAs (001) by CBE and plasma-assisted MBE," Journal of Crystal Growth, vol. 243, pp. 456-462, Sep 2002.
  • D. Starikov, et al., "Radio-frequency molecular-beam-epitaxy growth of III nitrides for microsensor applications," Journal of Vacuum Science & Technology B, vol. 19, pp. 1404-1408, Jul-Aug 2001.
  • Z. Mouffak, et al., "Effect of photo-assisted RIE damage in GaN Schottky structures," 2001 International Semiconductor Device Research Symposium, Proceedings, pp. 442-445, 2001.
  • W. M. Jadwisienczak, et al., "Visible emission from AlN doped with Eu and Tb ions," Journal of Applied Physics, vol. 89, pp. 4384-4390, Apr 15 2001.
  • D. Starikov, et al., "Diode structures based on p-GaN for optoelectronic applications in the near-ultraviolet range of the spectrum," Journal of Vacuum Science & Technology B, vol. 18, pp. 2620-2623, Nov-Dec 2000.
  • N. Medelci, et al., "Etch characteristics of GaN and BN materials in chlorine-based plasmas," Journal of Electronic Materials, vol. 29, pp. 1079-1083, Sep 2000.
  • W. M. Jadwisienczak, et al., "Visible emission from AlN doped with Eu, Tb, and Er ions," 2001 Ieee International Symposium on Compound Semiconductors, pp. 489-494, 2000.
  • A. Bensaoula, et al., "Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 2," Microelectronics Journal, vol. 31, pp. 323-331, May 2000.
  • A. Bensaoula, et al., "Selective area growth of GaN on Si(111) by chemical beam epitaxy," Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, vol. 18, pp. 1130-1134, Jul-Aug 2000.
  • A. Bensaoula, et al., "Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 1," Microelectronics Journal, vol. 31, pp. 311-322, May 2000.
  • N. Badi, et al., "Laser-induced modification of carbon nitride thin films," Journal of Applied Physics, vol. 88, pp. 7351-7353, Dec 15 2000.
  • V. Ageev, et al., "X-ray induced modification of electronic properties of boron nitride thin films," Journal of Applied Physics, vol. 88, pp. 7197-7200, Dec 15 2000.
  • M. V. Ugarov, et al., "UV laser induced interfacial synthesis of CN-BCN layers on diamond films in borazine and ammonia," Applied Surface Science, vol. 138, pp. 359-363, Jan 1999.
  • M. V. Ugarov, et al., "Laser-induced modification of electron field emission from nanocrystalline diamond films," Journal of Applied Physics, vol. 85, pp. 8436-8440, Jun 15 1999.
  • A. Tempez, et al., "Photoenhanced reactive ion etching of III-V nitrides in BCl3/Cl-2/Ar/N-2 plasmas," Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, vol. 17, pp. 2209-2213, Jul-Aug 1999.
  • D. Starikov, et al., "Metal-insulator-semiconductor Schottky barrier structures fabricated using interfacial BN layers grown on GaN and SiC for optoelectronic device applications," Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, vol. 17, pp. 1235-1238, Jul-Aug 1999.
  • N. Medelci, et al., "Photo-assisted RIE of GaN in BCl3/Cl-2/N-2," Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999, vol. 572, pp. 535-540, 1999.
  • E. Kim, et al., "Time of flight mass spectroscopy of recoiled ions studies of surface kinetics and growth peculiarities during gas source molecular beam epitaxy of GaN," Journal of Applied Physics, vol. 85, pp. 1178-1185, Jan 15 1999.
  • I. Berishev, et al., "Mg doping studies of electron cyclotron resonance molecular beam epitaxy of GaN thin Films," Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, vol. 17, pp. 2166-2169, Jul-Aug 1999.
  • I. Berishev, et al., "In situ surface composition and structure of InGaN and GaN thin films by time-of-flight mass spectroscopy of recoiled ions," Journal of Vacuum Science & Technology B, vol. 17, pp. 1209-1213, May-Jun 1999.
  • N. Badi, et al., "Field emission from as-grown and surface modified BN and CN thin films," Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, vol. 17, pp. 1191-1195, Jul-Aug 1999.
  • V. Ageev, et al., "Enhanced free carrier generation in boron nitride films by pulsed laser radiation," Applied Surface Science, vol. 138, pp. 364-369, Jan 1999.
  • D. Starikov, et al., "A hot electrons-based wide spectrum on-orbit optical calibration source," Space Technology and Applications International Forum - 1998, Pts 1-3, pp. 648-653, 1998.
  • J. A. Schultz, et al., "Concentration of atomic oxygen in low earth orbit and in the laboratory for use in high quality oxide thin film growth," Space Technology and Applications International Forum - 1998, Pts 1-3, pp. 724-728, 1998.
  • E. Kim, et al., "Time of flight mass spectroscopy of recoiled ions studies of gallium nitride thin film deposition by various molecular beam epitaxial methods," Mrs Internet Journal of Nitride Semiconductor Research, vol. 3, pp. art. no.-22, 1998.
  • I. Berishev, et al., "Surface composition and morphology of chemical beam epitaxy grown GaN thin films," Journal of Vacuum Science & Technology B, vol. 16, pp. 1270-1274, May-Jun 1998.
  • I. Berishev, et al., "High growth rate GaN films using a modified electron cyclotron resonance plasma source," Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, vol. 16, pp. 2791-2793, Sep-Oct 1998.
  • I. Berishev, et al., "Field emission properties of GaN films on Si(111)," Applied Physics Letters, vol. 73, pp. 1808-1810, Sep 28 1998.
  • A. Bensaoula, et al., "Surface composition of BN, CN, and BCN thin films," Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, vol. 16, pp. 2896-2900, Sep-Oct 1998.
  • A. Bensaoula, et al., "The use of multilayer neural networks in material synthesis," Ieee Transactions on Semiconductor Manufacturing, vol. 11, pp. 421-431, Aug 1998.
  • N. Badi, et al., "Boron nitride materials for tribological and high temperature high power devices," Chemical Aspects of Electronic Ceramics Processing, vol. 495, pp. 359-364, 1998.
  • M. V. Ugarov, et al., "Enhanced field emission characteristics from nanocrystalline diamond films through UV laser post-growth modification," Lasers in Synthesis, Characterization, and Processing of Diamond, vol. 3484, pp. 142-148, 1997.
  • W. T. Taferner, et al., "Group III-nitride materials growth using gas source molecular beam epitaxy," Space Technology and Applications International Forum, Pts 1-3, pp. 791-800, 1997.
  • I. Rusakova, et al., "TEM study of strain compensated InP/GaAs/GaP/GaAs superlattice structures," Thin Films - Structure and Morphology, vol. 441, pp. 445-450, 1997.
  • E. Kim, et al., "Nucleation and growth of chemical beam epitaxy gallium nitride thin films," Applied Physics Letters, vol. 71, pp. 3072-3074, Nov 24 1997.
  • E. Kim, et al., "TOF-LEIS characterization and growth of GaN thin films grown with ECR and NH3," Iii-V Nitrides, vol. 449, pp. 319-324, 1997.
  • M. F. Vilela, et al., "First epitaxial InP tunnel junctions grown by chemical beam epitaxy," Journal of Crystal Growth, vol. 164, pp. 465-469, Jul 1996.
  • W. T. Taferner, et al., "The investigation of GaN growth on silicon and sapphire using in-situ time-of-flight low energy ion scattering and RHEED," Journal of Crystal Growth, vol. 164, pp. 167-174, Jul 1996.
  • W. T. Taferner, et al., "Investigation of GaN deposition on Si, Al2O3, and GaAs using in situ mass spectroscopy of recoiled ions and reflection high-energy electron diffraction," Journal of Vacuum Science & Technology B, vol. 14, pp. 2357-2361, May-Jun 1996.
  • M. Lu, et al., "Electrical properties of boron nitride thin films grown by neutralized nitrogen ion assisted vapor deposition," Applied Physics Letters, vol. 68, pp. 622-624, Jan 29 1996.
  • A. Ignatiev, et al., "Thin film growth in the ultra-vacuum of space: The second flight of the Wake Shield Facility," Space Technology and Applications International Forum (Staif-96), Pts 1-3, pp. 83-87, 1996.
  • A. Bensaoula, et al., "The nitridation of GaAs and GaN deposition on GaAs examined by in situ time-of-flight low energy ion scattering and RHEED," Journal of Crystal Growth, vol. 164, pp. 185-189, Jul 1996.
  • N. Badi, et al., "Dynamical charge and force constant calculations in c-BN under pressure," Physica Status Solidi B-Basic Research, vol. 198, pp. 721-728, Dec 1996.
  • N. E. Medelci, et al., "Single and Multijunction Inp-Based Photovoltaic Devices for Space Applications," 12th Symposium on Space Nuclear Power and Propulsion, Pts 1 and 2, pp. 1017-1025, 1995.
  • C. Horton, et al., "Iii-V Compound Semiconductor Film Growth in Low Earth Orbit on the Wake Shield Facility," Conference on Nasa Centers for Commercial Development of Space (Nasa Ccds), pp. 305-311, 1995.
  • C. M. Chiang, et al., "Hydrogen Desorption and Ammonia Adsorption on Polycrystalline Gan Surfaces," Chemical Physics Letters, vol. 246, pp. 275-278, Nov 24 1995.
  • A. Bousetta, et al., "Physical-Properties of Thin Carbon Nitride Films Deposited by Electron-Cyclotron-Resonance Assisted Vapor-Deposition," Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, vol. 13, pp. 1639-1643, May-Jun 1995.
  • M. F. Vilela, et al., "Chemical Beam Epitaxy of Inp-Based Solar-Cells and Tunnel-Junctions," Journal of Vacuum Science & Technology B, vol. 12, pp. 1251-1253, Mar-Apr 1994.
  • M. F. Vilela, et al., "First time demonstration of InP p(++)/n(++) tunnel junction," 1994 Ieee First World Conference on Photovoltaic Energy Conversion/Conference Record of the Twenty Fourth Ieee Photovoltaic Specialists Conference-1994, Vols I and Ii, pp. 1946-1948, 1994.
  • W. T. Taferner, et al., "In-Situ Observations of Ge(001) and Ge/Si(001) Using Low-Energy Ion-Scattering," Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, vol. 12, pp. 3012-3017, Nov-Dec 1994.
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